Apparatus for detecting defect sizes in polysilicon and source-d

Details Apparatus for detecting defect sizes in polysilicon and source-d Apparatus for detecting defect sizes in polysilicon and source-d

1997-07-24

1998-10-13

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324537, G01R 3126

Patent

active

058217657

ABSTRACT:
An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively suicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.

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Jitendra B. Khare et al., "Extraction of Defect Size Distributions in an IC Layer Using Test Structure Data", IEEE, Transactions in Semiconductor Manufacturing, Vol. 7, Aug. 1994.

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