Apparatus for depositing dielectric films

Details Apparatus for depositing dielectric films Apparatus for depositing dielectric films

1990-05-15

1992-08-11

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118 501, C23C 1650

Patent

active

051369770

ABSTRACT:
An apparatus is disclosed for the application of dielectric films to a surface according to the so-called PECVD (plasma enhanced chemical vapor deposition) process.
By means of a shield (T) disposed in a simple parallel plate reactor, direct contact of the surfaces (PR) to be coated with the plasma, and thus damage to the resulting films due to the action of the plasma is avoided.
If the shield is in a movable arrangement, it can be removed during the coating process or its position can be changed. It then becomes possible to apply layers alternatingly with the use of the shield, or in a time saving manner, in direct contact with the plasma.

REFERENCES:
patent: 4526805 (1985-07-01), Yoshizawa
Schachter et al., Summary Abstract: Passivation of InP by plasma deposited phosphorus: Effects of surface treatment, J. Vac. Sci. Technol. B 4(4), pp. 1128-1129, Jul./Aug. 1986.
Jackson et al., Afterglow Chemical Vapor Deposition of SiO.sub.2, Solid State Technology, pp. 107-111, Apr. 1987.
Kulisch et al., Reduction of the concentration of slow insulator states in SiO.sub.2 /InP metal-insulator semiconductor structures, J. Vac. Sci. Technol. B 5(2), pp. 523-529, Mar./Arp. 1987.

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