Apparatus for depositing a thin film of a sputtered material on

Details Apparatus for depositing a thin film of a sputtered material on Apparatus for depositing a thin film of a sputtered material on

1990-01-26

1991-10-29

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 2041922, 20429812, C23C 1435

Patent

active

050613600

ABSTRACT:
Electrons released by an anode are attracted by an electric field toward a target cathode in a cavity to ionize argon atoms in the space between the anode and target. Magnets produce a magnetic field in the cavity in a direction perpendicular to the electrical field to produce a trapping spiral movement of the electrons in the cavity, thereby enhancing the ionization of the gaseous molecules. The ions bombard the target to emit sputtered atoms which are deposited on a semi-conductor wafer. The target may have a frusto-conical configuration defined by a single member or by a plurality of segmental tiles formed from different materials to provide for a deposition of a mixture of such different materials on the wafer. The target may be magnetizable. Under such circumstances, a permanent magnet may be disposed in the target with a polarity relative to the magnetic field to divert the magnetic field to the space external to the frusto-conical surface of the target so as to facilitate the ionization of atoms of the neutral gas by the electrons. Alternatively, the target may be hollow to provide a saturation of the magnetic field in the target and a resultant diversion of the magnetic field to the space external to the frusto-conical surface of the target to facilitate the trapping of the electrons in such space and the ionization of atoms of the neutral gas by the electrons.

REFERENCES:
patent: 4200510 (1980-04-01), O'Connell et al.
patent: 4414086 (1983-11-01), Lamont, Jr.
patent: 4564435 (1986-01-01), Wickersham
patent: 4622122 (1986-11-01), Landau

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