Apparatus for demagnification or full-size ion projection lithog

Details Apparatus for demagnification or full-size ion projection lithog Apparatus for demagnification or full-size ion projection lithog

1988-03-04

1990-01-16

Fields, Carolyn E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504923, 250281, 250396R, 250398, H01J 2700

Patent

active

048945498

ABSTRACT:
An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

REFERENCES:
patent: 4697086 (1987-09-01), Ishitani et al.
patent: 4710639 (1987-12-01), Sawaragi
patent: 4757208 (1988-07-01), McKenna et al.
patent: 4823011 (1989-04-01), Stengl et al.
patent: 4835399 (1989-05-01), Hosaka et al.
Stengl et al., Sol. State Technol., Feb. 1986.
Stengl et al., Technical Proceedings, Semi-Con/West, May 1986.
Stengl et al., Nuclear Instruments and Methods in Physics Research, Feb. 1987.
Burggraaf, Semiconductor International, Jul. 1985.
Bohlander, An Achromatic Mass Filter Employing Permanent Magnets for the Delft Ion Beam Pattern Generator, Microelectronic Engineering, 7, 1987.
E. Miyauchi et al.,-Computer Control of Maskless Ion Implanter . . . , Nucl. Instr. & Meth. in Physics Research B6, 183 (1985).
Bernheim et al.,-Ion Implantation, vol. 8, p. 446 (G. Dearnaley et al., North Holland Publ. Comp., 1973).
Gerhard Stengl et al., Ion Projection Lithography, Solid State Technology, (Feb. 1986), pp. 119-125.

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