Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-02-26
1998-08-25
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 30, 117 32, 117200, 117216, C30B 3500
Patent
active
057979901
ABSTRACT:
Orbital oscillations of the crystal ingot suspended in a cable in a Czochralski crystal puller are damped by mechanically connecting a high-temperature conductor to the ingot and generating a magnetic field in the vicinity of the conductor. The magnetic field induces an eddy current in the conductor when the ingot moves. The eddy current then interacts with the magnetic field to damp motion of the ingot. In one embodiment, the magnetic field generator is moved as the ingot grows to maintain the magnetic field in the vicinity of the conductor. In another embodiment, the strength of the magnetic field is adjusted dependent on the amplitude of the oscillations to conserve power.
REFERENCES:
patent: 3607139 (1971-09-01), Hanks
patent: 3841845 (1974-10-01), Keller
patent: 5009865 (1991-04-01), Boden et al.
patent: 5571320 (1996-11-01), Grimes et al.
Ferrofluidics Corporation
Garrett Felisa
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