Apparatus for crystallizing semiconductor with laser beams

Details Apparatus for crystallizing semiconductor with laser beams Apparatus for crystallizing semiconductor with laser beams

2005-06-08

2008-08-12

Fourson, George (Department: 2823)

Metal working

Barrier layer or semiconductor device making

C359S626000, C359S638000, C250S492220, C250S492230

Reexamination Certificate

active

07410508

ABSTRACT:
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member38C, rotatably disposed above the second stage to support an amorphous semiconductor.

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