Apparatus for controlling the atmosphere surrounding a crystal g

Details Apparatus for controlling the atmosphere surrounding a crystal g Apparatus for controlling the atmosphere surrounding a crystal g

1981-08-20

1984-04-17

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156DIG89, C30B 1534

Patent

active

044434111

ABSTRACT:
Method and apparatus for using a gas mixture containing an additive gas capable of beneficially altering the physical or chemical properties of a crystallized body grown from a melt by means of a shaping member. A suitable mixture of an inert gas and the additive gas is directed substantially uniformly over the entire melt surface of the meniscus existing between the top of the shaping member and the liquid/solid growth interface at which the crystallized body is formed. The method and apparatus are particularly suited to the growing of silicon ribbons from graphite crucibles for use in the production of photovoltaic solar cells, as evidenced by a substantial increase in the average minority carrier diffusion length in the silicon ribbon grown when the gas additive is a source of oxygen.

REFERENCES:
patent: 2889240 (1959-06-01), Rosi
patent: 3124489 (1964-03-01), Vogel et al.
patent: 3265469 (1966-08-01), Hall
patent: 4221754 (1980-09-01), Nowak
patent: 4239734 (1980-12-01), Ciszek

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