Apparatus for controlling nucleation of oxygen precipitates in s

Details Apparatus for controlling nucleation of oxygen precipitates in s Apparatus for controlling nucleation of oxygen precipitates in s

1996-01-22

1998-11-24

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117217, 117218, 117900, C30B 3500

Patent

active

058401202

ABSTRACT:
An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.

REFERENCES:
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5248378 (1993-09-01), Oda et al.
patent: 5316742 (1994-05-01), Tomioka et al.
patent: 5524574 (1996-06-01), Huang et al.
W. Bienert et al. "Performance Characteristics of Isothermal Furnace Liners" dynaTherm Corporation (Sep. 1984) 10 pages.
dynaTherm brochure "Isothermal Furnace Liner" Catalog No. IFL 84 (no date) 2 pages.
Thermacore brochure "Common Questions About Heat Pipes" (no date) 2 pages.

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