Apparatus for controlled growth of silicon and germanium crystal

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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422249, 156601, 156608, 156617SP, 156DIG88, B01J 1718

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active

041850769

ABSTRACT:
Apparatus is disclosed for controlling the growth of a crystalline body of a selected material so that the body has a selected cross-sectional shape. The apparatus includes the structure normally employed in known capillary die devices and further includes means for observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position.

REFERENCES:
patent: 3051035 (1962-08-01), Root
patent: 3291650 (1966-12-01), Dohmen
patent: 3428436 (1969-02-01), Tucker
patent: 3493770 (1970-02-01), Dessauer
patent: 3692499 (1972-09-01), Andrychuk
patent: 3740563 (1973-06-01), Reichard
patent: 3882319 (1975-05-01), Clement
patent: 3915656 (1975-10-01), Mlausky
patent: 3958129 (1976-05-01), Clement
patent: 3998598 (1976-12-01), Bonora
Patzner et al., SCP and Solid State Technology, Oct. 1967, pp. 25-30.
Veeco, New Dyna-Gro Crystal Puller, 2 pages.
Hamco, Crystal Growing Furnace, 4 pages.
Bardsley, J. of Cryst. Growth, 24/25 (Mar. 1974), pp. 369-374.

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