Apparatus for continuous growth of SiC single crystal from SiC s

Details Apparatus for continuous growth of SiC single crystal from SiC s Apparatus for continuous growth of SiC single crystal from SiC s

1993-01-25

1994-02-22

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118724, 118725, 118730, C23C 1600

Patent

active

052883264

ABSTRACT:
A chamber (10) is divided into a reaction zone (20) and a sublimation zone (30). A gaseous mixture (41) is supplied through a conduit (21) into the reaction zone (20) and heated by a heater (27). The components in the gaseous mixture (41) are reaxcted with each other to synthesize solid-phase SiC (42). The solid-phase SiC (42) is heated and evaporated by a heater (35), and condensed as a single crystal (43) on a seed crystal attached to a mount base (37). The mount base (37) is rotated and lowered in response to the growth of the SiC single crystal (43) by a rotary shaft (38). Since the SiC single crystal (43) grows from SiC synthesized by the vapor-phase reaction, the obtained product is of very high purity without the substantial inclusion of impurities. In addition, a single crystal having a large diameter or length can be obtained without any restrictions originated in a crucible.

REFERENCES:
patent: 5074954 (1991-12-01), Nishizawa
patent: 5149375 (1992-09-01), Matsuyama
patent: 5160397 (1992-11-01), Doki

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