Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-10-17
1993-08-31
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257192, H01L 2906, H01L 31072
Patent
active
052411907
ABSTRACT:
Quantum wells are typically formed in a semiconductor body comprising alternating barrier layers and quantum well layers. A longitudinal dimension can be defined along the layers, and the body has a pair of surfaces on opposite sides of the set of layers. In accordance with the invention, apparatus for contacting a plurality of layers within the semiconductor body comprises a first contact for contacting a plurality of wells at a first position and a second contact for contacting the wells at a second position longitudinally spaced apart from the first contact. A first electrode overlies and extends across the wells on one surface at a longitudinal position intermediate the two contacts, and second electrode on the opposite surface overlies and extends across the wells intermediate the contacts. By applying appropriate voltages to the electrodes, one or more of the underlying quantum wells can be selectively depleted locally of carriers, thereby controlling which of the wells can conduct between the contacts. This arrangement permits fabrication of a variety of new switching devices and transistors.
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Eisenstein James P.
Pfeiffer Loren N.
AT&T Bell Laboratories
Books Glen E.
Hille Rolf
Loke Steven
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