Apparatus for confining inductively coupled surface currents

Details Apparatus for confining inductively coupled surface currents Apparatus for confining inductively coupled surface currents

2007-10-23

2007-10-23

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S528000, C257SE21022, C257SE27046, C438S153000, C438S154000

Reexamination Certificate

active

11010970

ABSTRACT:
A deep n-well is formed beneath the area of an inductor coil. The use of a deep n-well lessens the parasitic capacitance by placing a diode in series with the interlayer dielectric cap. The deep n-well also reduces substrate noise. Once the n-well is implanted and annealed, a cross hatch of shallow trench isolation is patterned over the n-well. The shallow trench isolation reduces and confines the inductively coupled surface currents to small areas that are then isolated from the rest of the chip.

REFERENCES:
patent: 7057241 (2006-06-01), Ojala
patent: 2004/0195650 (2004-10-01), Yang et al.
patent: 2005/0023639 (2005-02-01), Yeh et al.

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