Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium
Patent
1990-10-02
1993-01-19
Bueker, Richard
Coating apparatus
Program, cyclic, or time control
Having prerecorded program medium
118705, 118715, 118719, 118725, C23C 1646
Patent
active
051804328
ABSTRACT:
In one embodiment, an apparatus programmed to automatically form a barrier layer for contacting a metal interconnect layer to one or more exposed N and P type silicon regions on a wafer. The wafer is heated with a direct radiation source, such as a lamp. To equalize the differing emissivities of the N type and P type silicon regions, an opaque layer of refractory metal is first formed on the regions at a temperature below approximately 100.degree. C. A refractory metal deposition process is then conducted at temperatures between 230.degree. C.-425.degree. C. During this higher temperature deposition process, the reducing gas is ramped up with time to increase the deposition rate of the refractory metal as the exothermic reducing reactions increasingly heat the contact areas. Other process and apparatus features enable higher bonding strength between the silicon surface and the formed barrier layer contacting the silicon surface and enable a higher purity content of the processing gases as well as improved diffusion of processing gases when injected into the processing chamber.
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VLSI Process Technologies, ICVE '89, published Oct. 17, 1989, Blewer et al.
Bueker Richard
LSI Logic Corporation
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