Apparatus for coating substrates using a microwave ECR plasma so

Details Apparatus for coating substrates using a microwave ECR plasma so Apparatus for coating substrates using a microwave ECR plasma so

1992-06-30

1995-01-03

Nguyen, Nam

Coating apparatus

Gas or vapor deposition

With treating means

118723MP, 1183MA, 118723AN, 118724, 118725, 118730, C23C 1650

Patent

active

053782844

ABSTRACT:
An apparatus and a method for producing layers on the surfaces of workpieces, preferably on spotlight, or headlight, reflector inserts formed of plastic, includes an apparatus having a vacuum chamber that can be operated as a batch system with a PCVD coating process, where a microwave ECR plasma coating source is used, and the workpieces to be coated are secured to a rotary cage arranged in the vacuum chamber. The rotary cage can be conducted past a microwave coating source with a frequency-matched and phase-matched planetary motion. Such a coating process can be used in a vacuum chamber, under plasma, and at pressures below 2.times.10.sup.-2 mbar.

REFERENCES:
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4582720 (1986-04-01), Yamazaki
patent: 4915979 (1990-04-01), Ishida et al.
patent: 4970435 (1990-11-01), Tanaka et al.
Tamura, "Production of Electrophotographic Sensitive Body", Pat. Abstract of Japan, B and 13, No. 63, 13 Feb. 1989.
Watanabe, "Glow Discharge Cracker", Pat. Abstracts of Japan B and 14, No. 115, 5 Mar. 1990.
Herak et al., "Effects of Substrate Bias on Structure and Properties of a SiiH Films Deposited by ECR Microwave Plasmas", Journal of Non -Crystalline Solids, pp. 277-280 (1987).
Kato et al., "Preparation of silicon nitride films at room temperature using double-tubed coaxial line-type microwave plasma chemical vapor deposition system", Journal of Applied Physics, pp. 492-497 (1987).

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