Apparatus for coating of silicon semiconductor surface

Details Apparatus for coating of silicon semiconductor surface Apparatus for coating of silicon semiconductor surface

1989-03-28

1991-11-26

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118719, 118724, 156345, 156643, 2041921, 20429802, 20429825, 4272481, 427255, 427309, 437228, C23C 1602

Patent

active

050674374

ABSTRACT:
An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.

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Curran, J. E., "The Properties and Applications of Low Energy Plasmas", Vacuum, vol. 34, Nos. 3-4 (Mar.-Apr. 1984), pp. 343-345.
Eliot K. Broadbent, William T. Stacy, Solid State Technology, Dec. 1985, "Selective Tungsten Processing by Low Pressure CVD", pp. 51-59.
Yonhau Tzeng, Tsan H. Lin, 1046 Journal of the Electrochemical Society 133 (1986), Jul., No. 7, Manchester, N.Y., U.S.A., pp. 1443-1448.

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