Apparatus for coating a substrate from an electrically conductiv

Details Apparatus for coating a substrate from an electrically conductiv Apparatus for coating a substrate from an electrically conductiv

1996-09-12

1998-02-17

Breneman, R. Bruce

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429807, 20429808, 20429811, 20429819, 20429826, C23C 1436

Patent

active

057188157

ABSTRACT:
A vacuum chamber includes a central compartment (1) in which a diode cathode (6) carrying an electrically conductive sputtering target (7) is located, and two outer compartments (11, 12) in which magnetron cathodes (13, 14) carrying target 15, 16) are located, the magnetron cathodes (13, 14) being connected to respective poles (20, 21) of an AC power source. The outer compartments (11, 12) are separated from the central compartment by walls having openings (33, 34) which flank a space (28) between the sputtering target (6) and the substrate (3). Process gas lines 24, 25) are arranged to introduce process gas into this space (3).

REFERENCES:
patent: 4956070 (1990-09-01), Nakoda et al.
patent: 5399252 (1995-03-01), Scherer et al.
patent: 5415757 (1995-05-01), Szcyrbowski et al.
Tisone & Bindell, "Low Voltage triode sputtering with a confined plasma" J. Vac. Sci. Tedin, vol. 11, pp. 519-527 (1974).
Schiller, "Hochrate-Sputtertechnik undderen Einsatz in verschiedenen Industriezweigen" Vacuum Technick 37.Jg., H. Jun. 1988, 162-175.
Schiller, "Verfahren und Einsatzmoglichkeiten des Plasmatron-Hochrate zerstoubens" Vacuum Technik 30Jg., H.Jul./1988, 195-207.
Kienel, "Moderne Beschichtungstechnologien von Architektarglas" Vacuum Technik 30 Jg. H.Aug./1981, 236-245.

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