Coating apparatus – Gas or vapor deposition – With treating means
Patent
1981-09-16
1983-12-27
Smith, John D.
Coating apparatus
Gas or vapor deposition
With treating means
118 501, 118728, 427 38, 204298, C23C 1308
Patent
active
044224079
ABSTRACT:
An apparatus for chemically activated depositing in a plasma. Said apparatus includes a chamber (1) in which a vacuum is maintained, said chamber being closed by means of a top plate (2) and a bottom plate (3) which are removable. Said apparatus further includes a substrate support (5) disposed about said axis, a reactive gas distributor manifold and means (4) for setting up a plasma inside said chamber (1). Said manifold (8) has two circular end portions (9,10) interconnected by pipes (11) in which gas outlet orifices are provided; said pipes being rotatable at a uniform speed about the axis of the chamber inside said substrate support; said support being of polygonal cross-section and constituted by rectangular longitudinally extending facets on which the substrates (7) are deposited.
The invention is used to deposit chromium, silicon, aluminium and the like.
REFERENCES:
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4225222 (1980-09-01), Kempter
patent: 4298443 (1981-11-01), Maydan
IBM Technical Disclosure Bulletin vol. 14 No. 9, Feb. 1972 p. 2251 "_Gas Injection System" by R. R. Garnache and K. W. Zyber.
Bessot Jean-Jacques
Bourdon Bernard
Compagnie Industrille des Telecommunications Cit-Alcatel
Plantz Bernard F.
Smith John D.
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