Apparatus for chemical vapor deposition of films on silicon wafe

Details Apparatus for chemical vapor deposition of films on silicon wafe Apparatus for chemical vapor deposition of films on silicon wafe

1981-11-04

1984-04-17

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

C30B 2306

Patent

active

044434103

ABSTRACT:
An apparatus for use in a process for the deposition of thin films onto silicon wafers in the fabrication of semiconductors. The wafers are located in a mutually parallel spaced-apart arrangement in a wafer supporting means which is located within a long quartz tube. The quartz tube is surrounded by a heating element and is evacuated at one end by a vacuum pump. The wafer supporting means is a generally cylindrically shaped container with a plurality of longitudinally extending rods spaced about its outer surface to permit reactant gas to flow inside the container and past the wafers. A pair of conduits extending through the front and back of the quartz tube are located near the bottom of the quartz tube and below the wafer supporting means. The conduits, which have slots or orifices for the exit of gas below the wafers, are connected to reactant gas supply tanks, gas flow controllers, and valves. The valves direct the gas into both ends of the conduits simultaneously.

REFERENCES:
patent: 3471326 (1969-10-01), Kappelmeyer et al.
patent: 3637434 (1972-01-01), Nakanuma et al.
patent: 4108106 (1978-08-01), Dozier
patent: 4203387 (1980-05-01), McMullen et al.
patent: 4211182 (1980-07-01), Rosnowski
patent: 4220116 (1980-09-01), Hochberg
patent: 4256053 (1981-03-01), Dozier

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