Coating apparatus – Gas or vapor deposition
Patent
1995-10-12
1998-03-17
Garrett, Felisa
Coating apparatus
Gas or vapor deposition
118723MD, 118723IR, B05C 1100
Patent
active
057282226
ABSTRACT:
An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate. The apparatus incorporates a heated source material, heated delivery lines, heated inert gas purge lines, a pressure differential mass flow controller, a control system with related valving, and a vacuum process chamber with walls that are temperature controlled as a complete source delivery system to accurately and repeatably provide source vapor for LPCVD deposition of aluminum oxide onto silicon substrates.
REFERENCES:
patent: 4696833 (1987-09-01), Monnig et al.
patent: 4844006 (1989-07-01), Page, Jr. et al.
patent: 4847469 (1989-07-01), Hofmann et al.
patent: 5020475 (1991-06-01), Crabb et al.
patent: 5038711 (1991-08-01), Dan et al.
patent: 5060354 (1991-10-01), Chizinsky
patent: 5121705 (1992-06-01), Sugino
patent: 5156461 (1992-10-01), Moslehi et al.
patent: 5160542 (1992-11-01), Mihira et al.
patent: 5160543 (1992-11-01), Ishihara et al.
patent: 5186120 (1993-02-01), Ohnishi et al.
patent: 5208643 (1993-05-01), Fair
patent: 5209182 (1993-05-01), Ohta et al.
patent: 5209952 (1993-05-01), Erdmann et al.
patent: 5232509 (1993-08-01), Min et al.
patent: 5273588 (1993-12-01), Foster et al.
patent: 5290604 (1994-03-01), Nielsen
patent: 5356476 (1994-10-01), Foster et al.
patent: 5431734 (1995-07-01), Chapple-Sokol et al.
Vossen, et al., "Thin Film Processes", Academic Press, pp. 290-325.
Keonjian, "Microelectronics, Theory, Design and Fabrication", pp. 191-193 and p. 256.
Vacuum General Precision Instrumentation, Product Spec for "Low Vapor Pressure Delivery System", pp. 2-10.
Ferran, "Delivering Low-Vapor Pressure Materials to LPCVD Processes", Microelectronic Manufacturing & Testing, Sep. 1988, pp. 26-29.
Aboaf, "Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum Alkoxide", 1967, pp. 948-952.
Barbee Steven George
Conti Richard Anthony
Kostenko Alexander
Sarma Narayana V.
Wilson Donald Leslie
Garrett Felisa
International Business Machines - Corporation
Mortinger, Esq. Alison
LandOfFree
Apparatus for chemical vapor deposition of aluminum oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for chemical vapor deposition of aluminum oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for chemical vapor deposition of aluminum oxide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954289