Apparatus for chemical vapor deposition

Coating apparatus – Gas or vapor deposition – Means to coat or impregnate particulate matter

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118 501, 118717, 118719, 118725, 118726, 118728, C23C 1600

Patent

active

046990828

ABSTRACT:
An apparatus for the chemical vapor deposition on substrates of coatings comprising compounds of a titanium sub-group of metals, the vanadium sub-group of metals and the chromium sub-group of metals at temperatures in the range of 250.degree. to 850.degree. C. is disclosed. Sub-halides, such as TiCl.sub.3, are reacted with N.sub.2 and H.sub.2 and thermodynamic and kinetic parameters are manipulated by flow rates and partial pressures of the reactants to achieve the deposition reaction in the temperature range of 250.degree. to 850.degree. C.

REFERENCES:
patent: 2962399 (1960-11-01), Ruppert et al.
patent: 3368914 (1968-02-01), Darnell et al.
patent: 3464843 (1969-09-01), Basche
patent: 3486927 (1969-12-01), Gauje
patent: 3617359 (1971-11-01), Wakefield
patent: 3637422 (1972-01-01), Landinham et al.
patent: 3654895 (1972-04-01), Bloom et al.
patent: 3656995 (1972-04-01), Reedy
patent: 3721577 (1973-03-01), Woerner
patent: 3784402 (1974-01-01), Reedy
patent: 3888705 (1975-06-01), Fletcher
patent: 3959557 (1976-05-01), Berry
patent: 4196233 (1980-04-01), Bitzer
patent: 4299861 (1981-11-01), Dietrich et al.
Chemical Abstracts, vol. 98, No. 6, 1983, p. 698.
PODOB, Mark, "CVD Hard Coatings Lengthen Tool Life", Metal Progress, pp. 50-52, May. 1982.
Journal Of Materials Science, TiC.sub.x -TiN Films Obtained by CVD In An Ultrasonic Field, T. Takahashi, H. Itoh, vol. 14, 1979, pp. 1285-1290.
Journal Of Material Science, Study of Growth Rate and Failure Mode Of Chemically Vapour Deposited TiN, TiC.sub.x N.sub.y and TiC On Cemented Tungsten Carbide, J. S. Cho, S. W. Nam, J. S. Chun, vol. 17, 1982, pp. 2495-2502.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for chemical vapor deposition will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-405302

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.