Apparatus for chemical etching of silicon

Details Apparatus for chemical etching of silicon Apparatus for chemical etching of silicon

1980-10-20

1983-01-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

62514R, 134 57R, 156630, 156631, 156637, 156645, 156657, 252 793, 252 794, C23F 102, F25B 1900, H01L 21306

Patent

active

043701922

ABSTRACT:
Extremely cold gaseous nitrogen is used as a cooling medium in the highly exothermic reaction between a chemical etch solution and silicon. This greatly increases the throughput of silicon material through the etchant over prior art techniques, particularly where it is desired to maintain the temperature of the etchant solution below 25.degree. C.

REFERENCES:
patent: 3127755 (1964-04-01), Hemery
patent: 3959982 (1976-06-01), Denis et al.
patent: 4251317 (1981-02-01), Foote

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