Apparatus for characterization of electrical properties of a sem

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324158F, G01R 3102, G01R 3122

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active

050362712

ABSTRACT:
An apparatus for the measurement of electrical properties of a semiconductor wafer is disclosed. A top contact mercury probe for contacting the upper surface of a wafer body is provided. The mercury probe is held by a kinematically stable probe arm which provides for very controlled movement of the mercury probe. A semiconductor wafer body horizontal and rotational movement system is provided for moving the wafer body to provide mapping capability. A top side return contact for doing measurements on wafer bodies with insulating substrates is disclosed. The top side return contact is also provided with a self-levelling and raising function, which ensures the bottom surface of the contact member to intimately contact the upper surface of the wafer body when desired, and also to raise the contact member off the wafer body when the bottom contact underneath the wafer is utilized.

REFERENCES:
patent: 3628137 (1971-12-01), Mazur
patent: 3794912 (1974-02-01), Severin et al.
patent: 4101830 (1978-07-01), Greig
patent: 4409547 (1983-10-01), Lederman
patent: 4587484 (1986-05-01), Shulman
Philip S. Schaffer & Thomas R. Lally, "Silicon Epitarial Wafer Profiling Using the Mercury-Silicon Schettky Diode Differential Capacitance Methods", Solid State Technology, pp. 229-233 Apr. 1983.
Peter S. Burggraaf, "C-V Plotting, C-T Measuring and Dopant Profiling: Applications and Equipment," Semiconductor International, pp. 29-35, Oct. 1980.
Albert Lederman, "Vacuum Operated Mercury Probe for C-V Plotting and Profiling", Solid State Technology, pp. 123-126 Aug. 1981.

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