Metal working – Barrier layer or semiconductor device making
Patent
1992-04-24
1993-12-28
Chaudhuri, Olik
Metal working
Barrier layer or semiconductor device making
29 2502, 148DIG6, 414737, 414763, 414786, B65G 4791
Patent
active
052735532
ABSTRACT:
There is provided a method for bonding at least two semiconductor wafers to each other which comprises the steps of warping one of the semiconductor wafers, bringing the warped semiconductor wafer into contact with the other semiconductor wafer at one contact point, and reducing pressure in an atmosphere surrounding the semiconductor wafers to flatten the warped semiconductor wafer. An apparatus for bonding wafers using the above bonding method comprises a first wafer holder for warping and holding one of two wafers and a second wafer holder for holding the other wafer. First and second covers are attached so as to surround the first and second wafer holders. The apparatus further comprises a shaft for rotating the first and second wafer holders so that one of the wafers contact the other wafer at one contact point and the first and second covers are connected to each other to form a chamber. A vacuum pump for reducing pressure in the chamber is connected to the chamber through an exhaust hole provided at one of the first and second covers.
REFERENCES:
patent: 3417459 (1968-12-01), Pomerantz et al.
patent: 4752180 (1988-06-01), Yoshikawa
patent: 4830984 (1989-05-01), Purdes
patent: 4939101 (1990-07-01), Black et al.
Wolf et al., Little Press, Sunset Beach, CA (1986), pp. 116-117.
Hoshi Tadahide
Yoshikawa Kiyoshi
Chaudhuri Olik
Horton Ken
Kabushiki Kaisha Toshiba
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