Apparatus for atomic layer epitaxial growth

Details Apparatus for atomic layer epitaxial growth Apparatus for atomic layer epitaxial growth

1989-12-21

1991-02-19

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

118725, 118730, 156610, C23C 1600

Patent

active

049933574

ABSTRACT:
An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap therebetween. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4806321 (1989-02-01), Nishizawa et al.

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