Apparatus for atomic layer deposition

Details Apparatus for atomic layer deposition Apparatus for atomic layer deposition

2006-03-29

2008-11-25

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C118S728000

Reexamination Certificate

active

07456429

ABSTRACT:
The present invention provides a distribution manifold for thin-film material deposition onto a substrate comprising a plurality of inlet ports for a sequence of gaseous materials, an output face comprising a plurality of open elongated output channels, each channel extending in a length direction substantially in parallel. The distribution manifold can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold. During operation of the system, relative movement between the output face and the substrate support is accomplished.

REFERENCES:
patent: 4413022 (1983-11-01), Suntola et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6551406 (2003-04-01), Kilpi
patent: 6821563 (2004-11-01), Yudovsky
patent: 2004/0067641 (2004-04-01), Yodovsky
patent: 2004/0216665 (2004-11-01), Soininen et al.
patent: 2005/0084610 (2005-04-01), Selitser
patent: 1 283 279 (2003-02-01), None

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