Coating apparatus – Gas or vapor deposition – With treating means
Patent
1989-07-07
1991-12-31
Chaudhuri, Olik
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118730, 427 50, 427 69, 437225, C23C 1600
Patent
active
050762079
ABSTRACT:
An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility. Furthermore, the apparatus involves very little generation of foreign matter, including reaction products in the form of particles sticking to the surface of the semiconductor wafer, thereby making it possible to produce high-quality semiconductor devices.
REFERENCES:
patent: 4676195 (1987-06-01), Yasui et al.
patent: 4816133 (1989-03-01), Barnett
patent: 4838201 (1989-06-01), Fraas et al.
patent: 4840139 (1989-06-01), Takei
patent: 4957772 (1990-09-01), Saitoh et al.
Ohmori Masashi
Tsutahara Kouichirou
Washitani Akihiro
Yamaguchi Toru
Chaudhuri Olik
Mitsubishi Denki & Kabushiki Kaisha
Pham Long
LandOfFree
Apparatus for atmospheric chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for atmospheric chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for atmospheric chemical vapor deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1501638