Apparatus for applying thin layers onto a substrate

Details Apparatus for applying thin layers onto a substrate Apparatus for applying thin layers onto a substrate

1988-04-25

1989-09-12

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, C23C 1434

Patent

active

048657131

ABSTRACT:
Thin layers are deposited on a substrate such as a silicon substrate in series of evacuatable chambers into each of which an inert gas is admitted. In the case of a reactive sputtering deposition, a reactive gas is also admitted. Contamination between neighboring chambers with the reactive gas is prevented, and the chambers are rapidly charged with new reactive gas to achieve a stable gas flow by providing an inlet system including a pair of shut-off valves, and a closable flow governor, the shut-off valves and the flow governor being actuated in synchronism.

REFERENCES:
patent: 4420385 (1983-12-01), Hartsough
patent: 4626336 (1986-12-01), Bloomquist et al.

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