Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1983-12-27
1985-02-19
Demers, Arthur P.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204192R, 204192M, C23C 1500
Patent
active
045004080
ABSTRACT:
The magnetic field of a magnetron sputter coating apparatus is controlled in response to measurements of plasma parameters to control deposition parameters, such as sputter deposition rate and material deposition thickness profile. From time to time the apparatus is standardized to change preset values for parameters of the plasma to manage the deposition parameters.
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Advances in High Rate Sputtering with Magnetron-Plasmatron Processing and Instrumentation, San Diego, Calif., Apr. 27, 1979, Schiller et al., pp. 455-467.
Boys Donald R.
Smith Robert M.
Cole Stanley Z.
Demers Arthur P.
Herbert Leon F.
Varian Associates Inc.
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