Apparatus for analyzing thin film property

Details Apparatus for analyzing thin film property Apparatus for analyzing thin film property

1995-07-25

1998-03-03

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

250306, 324719, 324754, G01R 3126

Patent

active

057239827

ABSTRACT:
A method and apparatus for measuring electrical characteristics of a thin surface layer of a sample such as a semiconductor element. A triangular pulse wave of is applied between the sample and a probe needle on a cantilever. By measuring current that flows through the thin surface layer of the sample using the probe needle, I/V characteristics are obtained. A control circuit keep constant the clearance between the probe needle and the thin surface layer of the sample by applying a voltage to a piezoelectric element that supports the sample. I/V characteristics are then measured at a plurality of test points on the thin surface layer of the sample.

REFERENCES:
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patent: 5336887 (1994-08-01), Yagi et al.
patent: 5436448 (1995-07-01), Hosaka et al.
patent: 5517128 (1996-05-01), Henninger
Fukano et al, "Scanning Force/Tunneling Microscopy As A Novel Technique For The Study Of Nanameter-Scale Dielectric Breakdown Of Silicon Oxide Layer", Japanese Journal of Applied Physics, vol. 32, No. 1B, 1993, pp. 290-293 Jan. 1993.

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