Apparatus for achieving etch rate uniformity

Details Apparatus for achieving etch rate uniformity Apparatus for achieving etch rate uniformity

1997-10-14

2000-04-18

Meeks, Timothy

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118724, H05H 100

Patent

active

060510994

ABSTRACT:
A can for use in an etching system including a continuous conductive wall with a first opening to be placed adjacent the reactor upper electrode and a second opening to be placed adjacent the reactor lower electrode. Preferably, the conductive wall is a dual wall further including an inner wall and an outer wall, the inner and outer wall separated by one or more openings configured normal to the height of the continuous wall, the openings allowing for the flow of coolant through the wall.

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Means for Controlling Radio Frequency Sputtering Potentials, 1988, vol. 30 No. 8 pp. 335-336 (No Month).
New Frontiers in Plasma Etching, Jul. 1996, pp. 152-164.
High Rate and Smooth Surface Etching of Al.sub.2 O.sub.3 -TiC Employing Inductively Coupled Plasma (ICP), 1995, pp. 185-188 (No Month).

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