Apparatus comprising heat pipes for controlled crystal growth

Chemical apparatus and process disinfecting – deodorizing – preser – Physical type apparatus – Crystallizer

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1566161, 1566164, 165 47, C30B 3500

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active

049801333

ABSTRACT:
This invention provides a method and apparatus for controlled crystal growth. The apparatus involves two tandemly aligned heat pipes separated by a conductive sleeve. The heat pipes establish two different isothermal temperature zones while the sleeve defines a gradient zone. A crystallization zone is located in this gradient zone. The method for controlled growth of a crystal involves lowering an ampoule through the gradient zone at an effective rate.

REFERENCES:
patent: 3677329 (1972-07-01), Kirkpatrick
patent: 3770047 (1973-11-01), Kirkpatrick et al.
patent: 3857990 (1974-12-01), Steininger et al.
patent: 4007369 (1977-02-01), Dietze
patent: 4093839 (1978-06-01), Moliterno et al.
patent: 4347431 (1982-08-01), Pearce et al.
patent: 4423516 (1983-12-01), Mellen, Sr.
patent: 4544025 (1985-10-01), Aldrich et al.
patent: 4545848 (1985-10-01), Lehoczky et al.
patent: 4681995 (1987-07-01), Ahern et al.
patent: 4783320 (1988-11-01), Adamski
patent: 4863553 (1989-09-01), Lehoczky et al.
D. E. Cox & F. K. Fong, "Growth of Single Crystals of Anhydrous Lanthanide Halides", Journal of Crystal Growth, vol. 20, 1973, pp. 233-238.

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