Apparatus comprising a single photon photodetector having...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

Reexamination Certificate

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C257SE31064, C257S108000, C257S113000, C257S129000, C257S146000, C257S168000, C257S175000, C257S186000, C257S199000, C257S322000, C257S467000, C257S481000, C257S603000, C257S431000, C257S438000, C250S336100, C250S338100, C250S338400, C250S339030, C250S340000, C250S341100, C250S352000

Reexamination Certificate

active

07626193

ABSTRACT:
A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.

REFERENCES:
patent: 2002/0197603 (2002-12-01), Chow et al.
patent: 2004/0033004 (2004-02-01), Welch et al.
Michael A. Krainak, Photoionization of Trapped Carriers in Avalanche Photodiodes to Reduce Afterpulsing During Geiger-Mode Photon Counting, NASA Goddard Space Flight Center, Laser and Electro-Optics Branch, Greenbeld, MD.
Paul L. Voss et al., 14MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes, Journal of Modern Optics, Jun. 15-Jul. 10, 2004, 1369-1379, vol. 51, No. 9-10, Taylor & Francis Ltd.
Sergio Cova, et al., Trapping Phenomena in Avalanche Photodiodes on Nanosecond Scale, IEEE Electron Device Letters, Dec. 1991, vol. 12, No. 12, IEEE.
Roland H. Haitz, Mechanisms Contributing to the Noise Pulse Rate of Avalanche Diodes, Journal of Applied Physics, Oct. 1965, vol. 36, No. 10.

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