Coherent light generators – Particular beam control device – Tuning
Patent
1989-09-15
1991-06-11
Davie, James W.
Coherent light generators
Particular beam control device
Tuning
372 8, 372 26, 372 50, H01S 310
Patent
active
050238787
ABSTRACT:
The inventive quantum well opto-electronic devices of cavity length L.sub.C comprise, in addition to a "gain" section, a "loss" section that is optically coupled to the gain section but electrically substantially isolated therefrom. Through change of the electrical bias on the loss section the modal gain of the cavity can be changed. Devices according to the invention are useful in a variety of applications. Exemplarily, by making (in an inventive laser) L.sub.C /L.sub.A greater than about 20 (L.sub.A is the length of the loss section) and making the electrical isolation between the gain section and the loss section greater than about 3 k.OMEGA., fast amplitude modulation of the laser radiation is possibly. By applying appropriate AR coatings to the cavity of an inventive device, a fast variable-gain optical amplifier can be made. Finally, an inventive laser can be switched electrically between two widely spaced wavelengths, the wavelength difference being at least 10 nm. This makes possible use of inventive devices in apparatus such as information storage systems, information processing systems, and communication systems. Methods of operating such apparatus are also disclosed.
REFERENCES:
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4720835 (1988-01-01), Akiba et al.
patent: 4802182 (1989-01-01), Thornton et al.
patent: 4817105 (1989-03-01), Yano
"InGaAs Closely Spaced Dual Wavelength Laser", by N. K. Dutta et al, Applied Physics Letters, 48 (25), Jun. 23, 1986, pp. 1725-1726.
"Determination of Spatial Surface State Density Distribution in MOS and SIMOS Transistors After Channel Hot Electron Injection", by H. E. Maes et al., Electronics Letters, vol. 18, No. 9, Apr. 1982, pp. 372-374.
"Dual-Wavelength Emission from a Twin-Stripe Single Quantum Well Laser", by Y. Tokuda et al, Applied Physics Letters, 51(21), Nov. 23, 1987, pp. 1664-1666.
"Heterostructure Semiconductor Lasers Prepared by Molecular Beam Epitaxy", by W. T. Tsang, IEEE Journal of Quantum Electronics, vol. QE-20, No. 10, Oct. 1984, pp. 1119-1132.
"Narrow Stripe Graded Barrier Single Quantum Well Lasers--Threshold Current Considerations", by N. B. Patel et al, IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 988-992.
"Second Quantized State Lasing of a Current Pumped Single Quantum Well Laser", by M. Mittelstein et al, Applied Physics Letters, 49(25), Dec. 22, 1986, pp. 1689-1691.
"Q Switching of Low-Trehshold Buried-Heterostructure Diode Lasers at 10 GHz", by D. Z. Tsang et al, Applied Physics Letters, 45(3), Aug. 1, 1984, pp. 204-206.
"Active Q Switching in a GaAs/AlGaAs Multiquantum Well Laser with an Intracavity Monolithic Loss Modulator", by Y. Arakawa et al, Applied Physics Letters, 48(9), Mar. 3, 1986, pp. 561-563.
"Widely Separate Wavelength Switching of Single Quantum Well Laser Diode by Injection-Current Control", by Y. Tokuda et al, Applied Physics Letters, 49(24), Dec. 15, 1986, pp. 1629-1631.
"High Frquency Buried Heterostructure 1.5 m GaInAsP/InP Lasers, Grown Entirely by Metalorganic Vapour Phase Epitaxy in Two Epitaxial Growth Steps", by T. Tanbun-Ek et al, Electronics Letters, vol. 24, No. 24, Nov. 24, 1988, pp. 1483-1484.
"Reproducible Growth of Low-Threshold Single and Multiple Quantum Well InGaAs/InP Lasers by a Novel Interlayer Growth Technique", by T. Tanbun-Ek et al, Applied Physics Letters, 55(9), Aug. 28, 1989, pp. 819-821.
Berthold Kurt
Levi Anthony F. J.
AT&T Bell Laboratories
Davie James W.
Pacher E. E.
LandOfFree
Apparatus comprising a quantum well device and method of operati does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus comprising a quantum well device and method of operati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus comprising a quantum well device and method of operati will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-789704