Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier
Reexamination Certificate
2007-03-15
2010-12-14
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
With attachment to temporary support or carrier
C257S461000, C257S618000, C438S114000
Reexamination Certificate
active
07851333
ABSTRACT:
An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
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Franosch Martin
Handtmann Martin
Oppermann Klaus-Guenter
Henry Caleb
Infineon - Technologies AG
Maginot Moore & Beck
Pham Thanh V
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