Apparatus and system for fabricating lithographic stencil masks

Details Apparatus and system for fabricating lithographic stencil masks Apparatus and system for fabricating lithographic stencil masks

1999-02-22

2000-08-29

Gorgos, Kathryn

Chemistry: electrical and wave energy

Apparatus

Electrolytic

134 941, 134 991, 134182, C25D 1700

Patent

active

061103314

ABSTRACT:
A method, apparatus and system for fabricating a stencil mask for ion beam and electron beam lithography are provided. The stencil mask includes a silicon substrate, a membrane formed from the substrate, and a mask pattern formed by through openings in the membrane. The method includes defining the mask pattern and membrane area using semiconductor fabrication processes, and then forming the membrane by back side etching the substrate. The apparatus is configured to electrochemically wet etch the substrate, and to equalize pressure on either side of the substrate during the etch process. The system includes an ion implanter for defining a membrane area on the substrate, optical or e-beam pattern generators for patterning various masks on the substrate, a reactive ion etcher for etching the mask pattern in the substrate, and the apparatus for etching the back side of the substrate.

REFERENCES:
patent: 5110373 (1992-05-01), Mauger
patent: 5401932 (1995-03-01), Hashimoto et al.
patent: 5567551 (1996-10-01), Yahalom et al.
Behringer, U. and Engelke, H., "Intelligent design splitting in the stencil mask technology used for electron-and ion-beam lithography", J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2400-2403.

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