Apparatus and process for the formation of monocrystalline silic

Details Apparatus and process for the formation of monocrystalline silic Apparatus and process for the formation of monocrystalline silic

1997-03-25

2000-09-05

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117109, 117952, C30B 2306

Patent

active

061136921

ABSTRACT:
The invention relates to an apparatus for forming SiC on a nucleus. The apparatus comprises a first enclosure (100) defined by at least one wall (102, 110, 112) and able to receive a SiC nucleus (122), a SiC powder reservoir (118) and means (120) for heating the enclosure and, according to the invention, the wall (102, 110, 112) is essentially covered by at least one SiC layer (116).

REFERENCES:
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patent: 3813340 (1974-05-01), Knippenberg et al.
patent: 4556436 (1985-12-01), Addamiano
patent: 5349207 (1994-09-01), Malhi
patent: 5863325 (1999-01-01), Kanemoto et al.
Patent Abstracts of Japan, vol. 18, No. 140 (C-1177), Mar. 8, 1994, JP-05-319998, Dec. 3, 1993.
Patent Abstracts of Japan, vol. 17, No. 367, Jul. 12, 1993, JP-05-058774, Mar. 9, 1993.
E-MRS 1994 Spring Meeting, May 24-27, 1994, Isabelle Garcon, et al., "Study of SiC Single Sublimation Growth Conditions".

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