Apparatus and process for static drying of substrates

Details Apparatus and process for static drying of substrates Apparatus and process for static drying of substrates

1987-02-17

1989-03-28

Sneed, H. M. S.

Cleaning and liquid contact with solids

Processes

Using sequentially applied treating agents

34 15, 34 92, 134 32, 134134, 134147, 134165, B08B 3000

Patent

active

048160814

ABSTRACT:
A process for drying semiconductor wafers or similar substrates maintains the substrates in a static position to avoid the generation of undesired particulate. The substrates are maintained within the apparatus at an angle of approximately 30.degree. from the vertical to facilitate complete drainage of the processing fluid. According to this invention, the substrates are positioned in the chamber of the apparatus at the appropriate angle, the chamber is closed in a fluid tight seal and filled with the processing fluid, until the fluid overflows through a vacuum valve. While maintaining the chamber completely filled, vacuum aspiration is continued to degas the chamber. While continuing vacuum aspiration of the chamber, a vacuum assisted drain valve is opened, and clean dry inert gas is introduced above the draining fluid. The draining step assures that any droplets remain with the draining fluid so that the substrates emerge dry as the fluid drains away. The inert gas flow is discontinued and vacuum aspiration is maintained briefly after the chamber has drained. The vacuum aspiration is discontinued and the chamber is repressurized to essentially ambient pressure prior to opening the chamber to remove the dry substrates.

REFERENCES:
patent: 4132567 (1979-01-01), Blackwood
patent: 4589926 (1986-05-01), Holmstand
patent: 4643774 (1987-02-01), Kishida et al.

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