Apparatus and process for growing silicon epitaxial layer

Details Apparatus and process for growing silicon epitaxial layer Apparatus and process for growing silicon epitaxial layer

1997-01-16

1999-11-30

Bueker, Richard

Coating apparatus

Gas or vapor deposition

C23C 1600

Patent

active

059935553

ABSTRACT:
An apparatus and a process for growing a silicon epitaxial layer on a main surface of a silicon substrate wafer are disclosed. The apparatus and process provide a reactor and a gas feeder system. The gas feeder system utilizes an auxiliary dopant supply mass flow control (MFC) to provide an auxiliary dopant only into a central injector that effects epitaxial deposition on the center of the wafer for autodoping correction. An auxiliary bellows metering valve is provided between the auxiliary MFC and the center injector to absorb pressure variations in the central flow line to prevent the pressure variations from reaching the auxiliary MFC. This results in a stable and consistent dopant concentration and resistivity profile.

REFERENCES:
patent: 5421288 (1995-06-01), Ohta et al.
patent: 5487358 (1996-01-01), Ohta et al.

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