Coating apparatus – Gas or vapor deposition
Patent
1997-01-16
1999-11-30
Bueker, Richard
Coating apparatus
Gas or vapor deposition
C23C 1600
Patent
active
059935553
ABSTRACT:
An apparatus and a process for growing a silicon epitaxial layer on a main surface of a silicon substrate wafer are disclosed. The apparatus and process provide a reactor and a gas feeder system. The gas feeder system utilizes an auxiliary dopant supply mass flow control (MFC) to provide an auxiliary dopant only into a central injector that effects epitaxial deposition on the center of the wafer for autodoping correction. An auxiliary bellows metering valve is provided between the auxiliary MFC and the center injector to absorb pressure variations in the central flow line to prevent the pressure variations from reaching the auxiliary MFC. This results in a stable and consistent dopant concentration and resistivity profile.
REFERENCES:
patent: 5421288 (1995-06-01), Ohta et al.
patent: 5487358 (1996-01-01), Ohta et al.
Bueker Richard
SEH America Inc.
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