Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1989-11-30
1993-02-02
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118724, 118725, 156611, 156612, 156613, 4272551, 4272552, 4272553, C23C 1646
Patent
active
051835100
ABSTRACT:
An apparatus for a chemical vapor deposition of a compound film on a substrate, comprising: a plurality of gas-generating chambers each containing an evaporating boat for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element for heating and evaporating the solid source, having an inlet for a carrier gas and a gas outlet, and arranged such that effective gas-generating portions thereof are thermally isolated from each other; a gas-mixing chamber for mixing gases from said gas-generating chambers, provided with a heater element for heating a gas passing therethrough and having inlets for gases flowing from said gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber containing a substrate on which a compound film is formed by a gas phase reaction, provided with a heating element for heating the substrate, and having an inlet for a gas mixture flowing from said gas-mixing chamber and an exhaust gas outlet. Also disclosed is a chemical vapor deposition process using the disclosed apparatus.
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patent: 4650539 (1987-03-01), Irving
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patent: 4911102 (1990-03-01), Manabe
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Itoh, Journal of Materials Science 21 (1986) 3677-3680.
Patent Abstracts of Japan, vol. 13, No. 21 (C-560) [3369], Jan. 18, 1989, & JP-A-63-225528, Sep. 20, 1988.
Bueker Richard
Fujitsu Limited
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