Apparatus and process for bulk wet etch with leakage protection

Details Apparatus and process for bulk wet etch with leakage protection Apparatus and process for bulk wet etch with leakage protection

2005-02-15

2005-02-15

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S747000, C438S748000, C438S753000

Reexamination Certificate

active

06855640

ABSTRACT:
When using hot alkaline etchants such as KOH, the wafer front side, where various devices and/or circuits are located, must be isolated from any contact with the etchant. This has been achieved by using two chambers that are separated from each other by the wafer that is to be etched. Etching solution in one chamber is in contact with the wafer's back surface while deionized water in the other chamber contacts the front surface. The relative liquid pressures in the chambers is arranged to be slightly higher in the chamber of the front surface so that leakage of etchant through a pin hole from back surface to front surface does not occur. As a further precaution, a monitor to detect the etchant is located in the DI water so that, if need be, etching can be terminated before irreparable damage is done.

REFERENCES:
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patent: 5891354 (1999-04-01), Lee et al.
patent: 6025278 (2000-02-01), Rolfson
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patent: 6428718 (2002-08-01), Birdsley et al.
patent: 6683007 (2004-01-01), Yamasaki et al.
patent: 20020060202 (2002-05-01), Fukunaga et al.

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