Apparatus and plasma ashing process for increasing...

Details Apparatus and plasma ashing process for increasing... Apparatus and plasma ashing process for increasing...

2005-09-01

2008-11-11

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000

Reexamination Certificate

active

07449416

ABSTRACT:
A plasma ashing process for removing photoresist material and post etch residues from a substrate comprising carbon, hydrogen, or a combination of carbon and hydrogen, wherein the substrate comprises a low k dielectric layer, the process comprising forming a plasma from an essentially oxygen free and nitrogen free gas mixture; introducing the plasma into a process chamber, wherein the process chamber comprises a baffle plate assembly in fluid communication with the plasma; flowing the plasma through the baffle plate assembly and removing photoresist material, post etch residues, and volatile byproducts from the substrate; periodically cleaning the process chamber by introducing an oxygen plasma into the process chamber; and cooling the baffle plate assembly by flowing a cooling gas over the baffle plate assembly. A process chamber adapted for receiving downstream plasma, the process chamber comprising an upper baffle plate comprising at least one thermally conductive standoff in thermal communication with a wall of the process chamber; and a lower baffle plate spaced apart from the upper baffle plate.

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