Apparatus and methods of forming preferred orientation-controlle

Details Apparatus and methods of forming preferred orientation-controlle Apparatus and methods of forming preferred orientation-controlle

1998-01-05

2000-02-15

Fahmy, Wael

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438658, 438660, 438666, 438686, H01L 128

Patent

active

060252057

ABSTRACT:
Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a substrate heated to temperature ranged from room temperature to 500.degree. C., and then annealing to substantially remove nitrogen introduced into the platinum film during the deposition thereof. The platinum film formed in this process has an excellent electrical conductivity (resistivity is lower than 15 .mu..OMEGA.-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, pores or pinholes.

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