Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-01-05
2000-04-25
Fahmy, Wael
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438658, 438661, 438686, H01L 2144
Patent
active
060543310
ABSTRACT:
A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.
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Chun Dong il
Lee Dong Su
Park Dong Yeon
Woo Hyun Jung
Yoon Eui Joon
Eaton Kurt
Fahmy Wael
Tong Yang Cement Corporation
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