Apparatus and methods for overlay, alignment mark, and...

Details Apparatus and methods for overlay, alignment mark, and... Apparatus and methods for overlay, alignment mark, and...

2007-11-20

2007-11-20

Punnoose, Roy M. (Department: 2886)

Optics: measuring and testing

By light interference

For dimensional measurement

C356S237200

Reexamination Certificate

active

11135605

ABSTRACT:
Methods and apparatus based on optical homodyne displacement interferometry, optical coherent-domain reflectometry (OCDR), and optical interferometric imaging are disclosed for overlay, alignment mark, and critical dimension (CD) metrologies that are applicable to microlithography applications and integrated circuit (IC) and mask fabrication and to the detection and location of defects in/on unpatterned and patterned wafers and masks. The metrologies may also be used in advanced process control (APC), in determination of wafer induced shifts (WIS), and in the determination of optical proximity corrections (OPC).

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