Apparatus and methods for ion beam implantation using ribbon...

Details Apparatus and methods for ion beam implantation using ribbon... Apparatus and methods for ion beam implantation using ribbon...

2011-03-08

2011-03-08

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S3960ML, C250S398000, C250S281000, C250S282000

Reexamination Certificate

active

07902527

ABSTRACT:
An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

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Nicholas R. White, et al., “The Control of Uniformity in Parallel Ribbon Ion Beams up to 24 Inches in Size”, The American Institute of Physics, 1999, pp. 830-835.

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