Apparatus and methods for ion beam implantation

Details Apparatus and methods for ion beam implantation Apparatus and methods for ion beam implantation

2005-08-22

2008-12-09

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200

Reexamination Certificate

active

07462843

ABSTRACT:
This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

REFERENCES:
patent: 6498348 (2002-12-01), Aitken
patent: 6770888 (2004-08-01), Benveniste et al.
patent: 7112789 (2006-09-01), White et al.

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