Apparatus and methods for forming a modulation doped...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257S194000, C257S024000, C257SE29246, C257SE29254

Reexamination Certificate

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07915642

ABSTRACT:
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.

REFERENCES:
patent: 5322808 (1994-06-01), Brown et al.
patent: 5701019 (1997-12-01), Matsumoto et al.
patent: 2008/0237577 (2008-10-01), Chui

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