Apparatus and methods for determining overlay of structures...

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

Reexamination Certificate

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C438S007000, C438S975000, C382S143000, C382S144000, C382S145000, C257SE23179

Reexamination Certificate

active

07541201

ABSTRACT:
Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.

REFERENCES:
patent: 6023338 (2000-02-01), Bareket
patent: 6118185 (2000-09-01), Chen et al.
patent: 6130750 (2000-10-01), Ausschnitt et al.
patent: 6462818 (2002-10-01), Bareket
patent: 6992764 (2006-01-01), Yang et al.
patent: 7317824 (2008-01-01), Ghinovker et al.
patent: 2003/0021465 (2003-01-01), Adel et al.
patent: 2003/0021466 (2003-01-01), Adel et al.
patent: 2003/0021467 (2003-01-01), Adel et al.
patent: 2004/0169861 (2004-09-01), Mieher et al.
patent: 2004/0233442 (2004-11-01), Mieher et al.
patent: 2004/0233443 (2004-11-01), Mieher et al.
patent: 2004/0233444 (2004-11-01), Mieher et al.
patent: 2006/0197950 (2006-09-01), Smith et al.
Int'l Application No. PCT/US 06/25836, Search Report dated Jan. 5, 2007.
Int'l Application No. PCT/US 06/25836, Written Opinion dated Jan. 5, 2007.
Bishop, et al, “The OMAG3 Reticle Set,” Jul. 31, 2003, International SEMATECH, Technology Transfer #3074417A-ENG, pp. 1-26.

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