Apparatus and methods for blocking highly scattered charged...

Details Apparatus and methods for blocking highly scattered charged... Apparatus and methods for blocking highly scattered charged...

2005-05-17

2005-05-17

Smith, Zandra V. (Department: 2877)

Radiant energy

Irradiation of objects or material

Reexamination Certificate

active

06894291

ABSTRACT:
Apparatus and methods are disclosed pertaining to microlithography performed using a charged particle beam. In an exemplary apparatus, the projection-optical system includes a first projection lens situated downstream of a pattern-defining reticle and a second projection lens situated downstream of the first projection lens. Between the first and second projection lenses is a back focal plane of the first projection lens, at which focal plane a beam crossover is formed. The projection-optical system includes a cutoff-plate assembly, including at least one aperture-defining cutoff plate, located between the reticle and the back focal plane. The respective aperture in each cutoff plate is wider than an aperture in a scattering aperture conventionally located at the back focal plane. If the cutoff-plate assembly includes multiple cutoff plates, the aperture defined in the cutoff plate closer to the reticle is wider than the aperture defined in the more downstream cutoff plate. At least one of the cutoff plates defines an aperture that is laterally extended in a beam-deflection direction in the projection-optical system.

REFERENCES:
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patent: 6087669 (2000-07-01), Suzuki
patent: 6151101 (2000-11-01), Okino
patent: 6573515 (2003-06-01), Suzuki
Koops et al., “Submicron Lithography by Demagnifying Electron-Beam Projection,” in Schmahl et al.,X-Ray Microscopy, Springer Series in Optical Sciencesvol. 43:118-129, Springer Verlag, Berlin, 1984.

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