Apparatus and method to achieve continuous interface and...

Details Apparatus and method to achieve continuous interface and... Apparatus and method to achieve continuous interface and...

2005-05-24

2005-05-24

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

C438S584000

Reexamination Certificate

active

06897119

ABSTRACT:
A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.

REFERENCES:
patent: 6203613 (2001-03-01), Gates et al.

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